問い合わせ先:
名古屋大学 シンクロトロン光研究センター
田渕 雅夫
Tel: 052-789- 5430
E-mail: m.tabuchi nusr.nagoya-u.ac.jp
問い合わせ先:
名古屋大学 大学院工学研究科 量子工学専攻
齋藤弥八
Tel: 052-789-4459, Fax: 052-789-3703
E-mail:ysaitosurf.nuqe.nagoya-u.ac.jp
要旨: A review will be made of recent applications of X-ray absorption fine structure (XAFS) and related techniques to the study of the local atomic and electronic structure of dilute and concentrated nitride seiconductors, with special emphasis on the identification of the defects induced by low energy hydrogen irradiation.?? I will make a brief introduction to the XAFS technique with synchrotron radiation, illustrating the basic physical mechanism, the measurement method and how information on the local structural properties of materials is obtained.?? Dilute nitrides of the type GaAs1-xNx (x ~ 1%) exhibit a range of interesting and useful physical properties, including an unexpected red shift of the band gap caused by N incorporation. The red shift can be reversibly eliminated by exposure to low energy hydrogen beams. By using N K-edge XAFS aided by DFT and full multiple scattering structural and spectral simulations we have been able to determine that the defect responsible for the band gap variation consists in two H atoms linked to a N one in a quasi C2v symmetry geometry [1?3]. Complementary to our XAFS investigations (which probe the conduction band DOS), we have very recently used X-ray Emission Spectroscopy (XES) to probe the changes in the valence band DOS induced by hydrogenation by analyzing the lineshape of the valence ? to ? N 1s transitions. The XES results show that the opening of the band gap induced by H is locally due to an upward shift of the conduction band minimum while the position of the valence band maximum is unaffected.?? Concentrated nitrides such as InxGa1-xN alloys are attracting considerable interest since the band gap spans a wide spectral range as a function of x. Also in this case, hydrogen irradiation causes an increase in the band gap. We will present and discuss high quality N edge XANES spectra of pristine InxGa1- xN alloys and atom ? specific spectral simulations which illustrate the link between local structural distortions and the XAFS lineshape. Also in this case, the effects of hydrogenation have been studied by a combination of XAFS and DFT simulations of candidate defective structures.
問い合わせ先:
名古屋大学 シンクロトロン光研究センター
田渕 雅夫
Tel: 052-789- 5430
E-mail: m.tabuchi nusr.nagoya-u.ac.jp
問い合わせ先:
名古屋大学大学院理学研究科
物質理学専攻化学系
大内幸雄
Tel: 052-789-2485, Fax: 052-789-2944
E-mail: ohuchichem.nagoya-u.ac.jp
日時: 平成24年7月11日(水) 13:00 〜14:30
場所: 名古屋大学工学研究科1号館3階 131講義室
講師: Prof. Chaskar Manohar Ganpat (VBL招聘研究員) Baburaoji Gholap大教授
題目: Synthesis of fine calcium titanate particles by flux method and their photocatalytic performances for hydrogen production
問い合わせ先:
名古屋大学大学院工学研究科
化学・生物工学専攻応用
吉田寿雄
Tel:052-789-4609、Fax:052-789-3178
E-mail: yoshidahapchem.nagoya-u.ac.jp